This dissertation, "Molecular Beam Epitaxial Growth of GaN on Si(111) Substrate" by Zhongjie, Xu, 徐忠杰, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4586633 Subjects: Molecular beam epitaxy Gallium nitride Silicon